Department of Physics, Engineering Physics & Astronomy

Department of Physics, Engineering Physics & Astronomy
Department of Physics, Engineering Physics & Astronomy

Effects of Dissipation on a Superconducting Single Electron Transistor

Jan B. Kycia
Department of Physics, University of Waterloo

Wednesday, March 26, 2003
10:30 AM @ Stirling 501

Abstract:

A single electron transistor (SET) is a sub-micron device in which the tunneling rate of electrons can be controlled by a gate voltage. SET based devices show promise for applications in high speed logic, low noise amplifiers and Quantum computing. I will introduce this subject and discuss the effects of dissipation and coupling to the environment on the transport properties of a superconducting single electron transistor (sSET). Dissipation was introduced by means of a 2D electron gas (2DEG) ground plane 100 nm below the sSET. Depleting the 2DEG allows us to vary the dissipation in situ. The results of this experiment will be presented and a comparison to theory will be made.